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Triple-Mode Single-Transistor Graphene Amplifier and Its Applications
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Xuebei Yang†, Guanxiong Liu‡, Alexander A. Balandin‡*, and Kartik Mohanram†§* † Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States‡ Nano-Device Laboratory, Department of Electrical Engineering and Materials Science and Engineering Program, Bourns College of Engineering, University of California-Riverside, Riverside, California 92521, United States§ Department of Computer Science, Rice University, Houston, Texas 77005, United StatesACS Nano, Article ASAPDOI: 10.1021/nn1021583Publication Date (Web): October 12, 2010Copyright © 2010 American Chemical Society * Address correspondence to
[email protected];
[email protected]., These authors contributed equally to this work
Abstract
We propose and experimentally demonstrate a triple-mode single-transistor graphene amplifier utilizing a three-terminal back-gated single-layer graphene transistor. The ambipolar nature of electronic transport in graphene transistors leads to increased amplifier functionality as compared to amplifiers built with unipolar semiconductor devices. The ambipolar graphene transistors can be configured as n-type, p-type, or hybrid-type by changing the gate bias. As a result, the single-transistor graphene amplifier can operate in the common-source, common-drain, or frequency multiplication mode, respectively. This in-field controllability of the single-transistor graphene amplifier can be used to realize the modulation necessary for phase shift keying and frequency shift keying, which are widely used in wireless applications. It also offers new opportunities for designing analog circuits with simpler structure and higher integration densities for communications applications.
Keywords:
graphene; transistor; ambipolar; triple-mode amplifier; phase shift keying; frequency shift keying
izvor: http://pubs.acs.org/