Mikorist Napisano Oktobar 22, 2018 #1 Napisano Oktobar 22, 2018 Evo šta će da oduva i LanPe i SITove Vacuum channel transistor combines best of semiconductors and vacuum tubes April 4, 2017 by Lisa Zyga, Phys.org feature Illustrations and scanning electron microscope image of the nanoscale vacuum channel transistor. Credit: Han et al. ©2017 American Chemical Society (Phys.org)—Although vacuum tubes were the basic components of early electronic devices, by the 1970s they were almost entirely replaced by semiconductor transistors. But in the past few years, researchers have been developing "nanoscale vacuum channel transistors" (NVCTs) that combine the best of vacuum tubes and modern semiconductors into a single device. Compared to conventional transistors, NVCTs are faster and more resistant to high temperatures and radiation. These advantages make NVCTs ideal candidates for applications such as radiation-tolerant deep space communications, high-frequency devices, and THz electronics. They are also candidates for extending Moore's law—which states that the number of transistors on a computer chip doubles approximately every two years—which is expected to soon hit a roadblock due to the physical limitations of shrinking semiconductor transistors. On the other hand, traditional vacuum tubes have certain disadvantages compared to semiconductor transistors, which caused them to become obsolete. Notably, vacuum tubes are very large and consume a lot of energy. With the new NVCTs, size is no longer an issue because the new devices are produced using modern semiconductor fabrication techniques, and so can be made as small as a few nanometers across. Whereas traditional vacuum tubes look like light bulbs, NVCTs look more like typical semiconductor transistors and can only be seen under a scanning electron microscope. To address the more pressing issue of energy consumption, in a new study researchers Jin-Woo Han, Dong-Il Moon, and M. Meyyappan at the NASA Ames Research Center in Moffett Field, California, have designed a silicon-based NVCT with an improved gate structure that reduces the drive voltage from tens of volts to less than five volts, resulting in a lower energy consumption. Their work is published in a recent issue of Nano Letters. In an NVCT, the gate is the component that receives the drive voltage and, based on this voltage, it controls the flow of electrons between two electrodes. In contrast, in the old vacuum tubes, electrons were released by heating the emitter of the device. Because the electrons traveled through a vacuum (the vacuum gap), they moved at very high speeds, which led to the fast operation. In NVCTs, there is not actually a vacuum, but instead the electrons travel across a space filled with an inert gas such as helium at atmospheric pressure. Since the distance between electrodes is so small (as little as 50 nm), the probability of an electron colliding with a gas molecule is very low, and so the electrons move just as quickly through this "quasi-vacuum" as they do in an actual vacuum. Even with some collisions occurring, the gas molecules are not ionized due to the lower operating voltage. Perhaps the greatest advantage of the new vacuum transistors is their ability to tolerate high temperatures and ionizing radiation, which makes them promising candidates for the harsh environments often experienced by military and space applications. In the new study, the researchers experimentally demonstrated that the NVCTs continue to operate at the same level of performance at temperatures of up to 200 °C, whereas conventional transistors would cease to function at this temperature. Tests also showed that the new NVCTs are robust against gamma and proton radiation. In the future, the researchers plan to further improve the performance of this "new old" technology. "Future research plans include device modeling work at the nanoscale, including structure and material properties," Han told Phys.org. "Also we plan to study aging mechanisms to improve reliability and lifetime." Explore further: Return of the vacuum tube More information: Jin-Woo Han, Dong-Il Moon, and M. Meyyappan. "Nanoscale Vacuum Channel Transistor." Nano Letters. DOI: 10.1021/acs.nanolett.6b04363 Nema silikona uopšte... nije solid state a jeste tranzistor (ili je nešto između)
Illustrations and scanning electron microscope image of the nanoscale vacuum channel transistor. Credit: Han et al. ©2017 American Chemical Society (Phys.org)—Although vacuum tubes were the basic components of early electronic devices, by the 1970s they were almost entirely replaced by semiconductor transistors. But in the past few years, researchers have been developing "nanoscale vacuum channel transistors" (NVCTs) that combine the best of vacuum tubes and modern semiconductors into a single device. Compared to conventional transistors, NVCTs are faster and more resistant to high temperatures and radiation. These advantages make NVCTs ideal candidates for applications such as radiation-tolerant deep space communications, high-frequency devices, and THz electronics. They are also candidates for extending Moore's law—which states that the number of transistors on a computer chip doubles approximately every two years—which is expected to soon hit a roadblock due to the physical limitations of shrinking semiconductor transistors. On the other hand, traditional vacuum tubes have certain disadvantages compared to semiconductor transistors, which caused them to become obsolete. Notably, vacuum tubes are very large and consume a lot of energy. With the new NVCTs, size is no longer an issue because the new devices are produced using modern semiconductor fabrication techniques, and so can be made as small as a few nanometers across. Whereas traditional vacuum tubes look like light bulbs, NVCTs look more like typical semiconductor transistors and can only be seen under a scanning electron microscope. To address the more pressing issue of energy consumption, in a new study researchers Jin-Woo Han, Dong-Il Moon, and M. Meyyappan at the NASA Ames Research Center in Moffett Field, California, have designed a silicon-based NVCT with an improved gate structure that reduces the drive voltage from tens of volts to less than five volts, resulting in a lower energy consumption. Their work is published in a recent issue of Nano Letters. In an NVCT, the gate is the component that receives the drive voltage and, based on this voltage, it controls the flow of electrons between two electrodes. In contrast, in the old vacuum tubes, electrons were released by heating the emitter of the device. Because the electrons traveled through a vacuum (the vacuum gap), they moved at very high speeds, which led to the fast operation. In NVCTs, there is not actually a vacuum, but instead the electrons travel across a space filled with an inert gas such as helium at atmospheric pressure. Since the distance between electrodes is so small (as little as 50 nm), the probability of an electron colliding with a gas molecule is very low, and so the electrons move just as quickly through this "quasi-vacuum" as they do in an actual vacuum. Even with some collisions occurring, the gas molecules are not ionized due to the lower operating voltage. Perhaps the greatest advantage of the new vacuum transistors is their ability to tolerate high temperatures and ionizing radiation, which makes them promising candidates for the harsh environments often experienced by military and space applications. In the new study, the researchers experimentally demonstrated that the NVCTs continue to operate at the same level of performance at temperatures of up to 200 °C, whereas conventional transistors would cease to function at this temperature. Tests also showed that the new NVCTs are robust against gamma and proton radiation. In the future, the researchers plan to further improve the performance of this "new old" technology. "Future research plans include device modeling work at the nanoscale, including structure and material properties," Han told Phys.org. "Also we plan to study aging mechanisms to improve reliability and lifetime." Explore further: Return of the vacuum tube More information: Jin-Woo Han, Dong-Il Moon, and M. Meyyappan. "Nanoscale Vacuum Channel Transistor." Nano Letters. DOI: 10.1021/acs.nanolett.6b04363
Mikorist Napisano Oktobar 22, 2018 Autor #2 Napisano Oktobar 22, 2018 Evo ga i Vacum VFET https://www.sciencedirect.com/science/article/pii/S0038110117301727 još samo da počnu da ga proizvode
Mikorist Napisano Oktobar 22, 2018 Autor #3 Napisano Oktobar 22, 2018 9 minutes ago, Mikorist said: Evo ga i Vacum VFET https://www.sciencedirect.com/science/article/pii/S0038110117301727 još samo da počnu da ga proizvode ovakav graf još nisam video
Mikorist Napisano Oktobar 23, 2018 Autor #4 Napisano Oktobar 23, 2018 Ovo je još luđe Carbon nanotube vacuum transistors (umesto silicijuma je ugljenična nanocev) 0002. In vacuum transistors, the traditional semiconduc tor channel material commonly found in field effect transis tors is replaced with a vacuum channel. See, for example, Han et al., “Vacuum nanoelectronics' Back to the future?— Gate insulated nanoscale vacuum channel transistor.” Applied Physics Letters 100, pgs. 213505-1-213505-4 (May 2012). 0003 Vacuum transistors are useful for the next genera tion high speed and low-power electronics. For instance, vacuum transistors offer high speed performance with the potential to reach terahertz (THz) operation with Zero body to-gate-capacitance and ballistic transport of electrons. They operate at low power with the potential to achieve sub threshold swing less than 60 millivolts per decade (mV/dec) with scaled dielectrics. 0004. However, conventional vacuum transistors have several notable drawbacks. High voltage is needed to induce field emission. For instance, 1-10 volts are needed for current silicon-based devices. These devices also have a low field emission current density. See, for example, Srisonphan et al., “Metal-oxide-semiconductor field-effect transistor with a vacuum channel.” Nature Nanotechnology 7, 504-508 (July 2012). 0005. Therefore, improved vacuum transistor designs which do not suffer from the above-described drawbacks would be desirable. https://patentimages.storage.googleapis.com/74/a9/38/85f1922d6fd4a8/US20170062743A1.pdf
Mikorist Napisano Oktobar 23, 2018 Autor #5 Napisano Oktobar 23, 2018 Tamo negde 2030 pojačalo 2x100W na baterije opušteno. I to u mobilnom telefonu. Zakačiš na džek za slušalice zvučnike direkt.
Vix Napisano Oktobar 23, 2018 #6 Napisano Oktobar 23, 2018 Nego svi spominju kako su ti tranziatori otporni na zracenje itd. Niko ne spominje kako oni mogu zvucati u SE konfiguraciji. Pa mi Audiofifilisticari smo bas manjina, niko nas ne sisa
vladd Napisano Oktobar 23, 2018 #7 Napisano Oktobar 23, 2018 Pa to im treba, da ga sutnu u svemir i da imaju pouzdanu komunikaciju, za razmazene upotrebe ce se nacekati, bar ovi najmladji
чика-Брка Napisano Oktobar 23, 2018 #8 Napisano Oktobar 23, 2018 38 minutes ago, Mikorist said: Tamo negde 2030 pojačalo 2x100W na baterije opušteno. I to u mobilnom telefonu. Zakačiš na džek za slušalice zvučnike direkt. 2x 100w mozda kineskih ili Technics-ovih. vladd je reagovao/la na ovo 1
Mikorist Napisano Oktobar 23, 2018 Autor #9 Napisano Oktobar 23, 2018 59 minutes ago, Vix said: Nego svi spominju kako su ti tranziatori otporni na zracenje itd. Niko ne spominje kako oni mogu zvucati u SE konfiguraciji. Pa mi Audiofifilisticari smo bas manjina, niko nas ne sisa Gledaj našta liči curve od karbon vakum tranzistora Neki novi zvuk.
Mikorist Napisano Oktobar 23, 2018 Autor #10 Napisano Oktobar 23, 2018 19 minutes ago, sax.hifi said: 2x 100w mozda kineskih ili Technics-ovih. I to nije loše. Tehniks u telefonu.
Mikorist Napisano Oktobar 23, 2018 Autor #11 Napisano Oktobar 23, 2018 36 minutes ago, vladd said: Pa to im treba, da ga sutnu u svemir i da imaju pouzdanu komunikaciju, za razmazene upotrebe ce se nacekati, bar ovi najmladji To i mobilna telefonija. To će direkt da ide u telefone. Jer smanjuje veličinu predajnika....
Mikorist Napisano Oktobar 23, 2018 Autor #13 Napisano Oktobar 23, 2018 1 minute ago, sax.hifi said: al ne svetle, jbg. jbg...možda i svetle pod mikroskopom
чика-Брка Napisano Oktobar 23, 2018 #14 Napisano Oktobar 23, 2018 pih. napravis pojacalo koje ne svetli i jos plus ne moze ni da te ubije struja. NIXIE je reagovao/la na ovo 1
Mikorist Napisano Oktobar 23, 2018 Autor #15 Napisano Oktobar 23, 2018 Oni pominju u drugoj publikaciji da se javlja Quantum tunnelling kod tako malih lampi. Jer se na tako malom rastojanju elektroni kreću brže od svetlosti (kroz dijalektrik) . I javlja se svetlost plave boje. Tkzv Cherenkov radiation .
Leonardo Napisano Oktobar 23, 2018 #16 Napisano Oktobar 23, 2018 Do džadža! Celo pojačalo stane u prednju ploču veličine Milka čokolade (80g)
Mikorist Napisano Oktobar 23, 2018 Autor #17 Napisano Oktobar 23, 2018 2 minutes ago, Leonardo said: Do džadža! Celo pojačalo stane u prednju ploču veličine Milka čokolade (80g) Celo pojačalo prednja ploča od pojačala. Okačiš ga na zid
Mikorist Napisano Oktobar 23, 2018 Autor #18 Napisano Oktobar 23, 2018 Ovo je najbolji text na ovu temu . Nuklearna fizika u tranzistoru http://lib.buet.ac.bd:8080/xmlui/bitstream/handle/123456789/3801/Full Thesis.pdf?sequence=1 2D i 3D prostiranje kroz tranzistor. Kao da je hadronski kolajder
Mikorist Napisano Oktobar 23, 2018 Autor #19 Napisano Oktobar 23, 2018 Cela zabuna jeste što se zove VFET. Ovo je zapravo nano vakuumska cev. Quote Meyyappan and colleagues estimate that their nano vacuum tube operates at frequencies up to 0.46 terahertz—some 10 times faster than the best silicon transistors. The team's device isn't the first attempt at miniaturizing the vacuum tube. Ako je 10 puta brži od tranzistora to više nije klasični poluprovodnik (cev)... A nije ni tranzistor...
vladd Napisano Oktobar 23, 2018 #20 Napisano Oktobar 23, 2018 Ako ne rese konvergenciju plazme, bice problema kao i kod plazma ekrana, plazma ecovanje, rasipanje plazma bima i obaranje vakuuma. Mikorist je reagovao/la na ovo 1
Mikorist Napisano Oktobar 23, 2018 Autor #21 Napisano Oktobar 23, 2018 14 minutes ago, vladd said: Ako ne rese konvergenciju plazme, bice problema kao i kod plazma ekrana, plazma ecovanje, rasipanje plazma bima i obaranje vakuuma. Ali biće veselo. Zamisli kućni računar čiji CPU ima brzinu od 1 Terahertz vladd je reagovao/la na ovo 1
ebe Napisano Oktobar 23, 2018 #22 Napisano Oktobar 23, 2018 On 10/22/2018 at 2:25 PM, Mikorist said: ...radiation-tolerant deep space communications, high-frequency devices, and THz electronics... Po nameni se i cena da pretpostaviti.
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