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Carbon nanotube vacuum transistors (umesto silicijuma je ugljenična nanocev)
0002. In vacuum transistors, the traditional semiconduc
tor channel material commonly found in field effect transis
tors is replaced with a vacuum channel. See, for example,
Han et al., “Vacuum nanoelectronics' Back to the future?—
Gate insulated nanoscale vacuum channel transistor.”
Applied Physics Letters 100, pgs. 213505-1-213505-4 (May
2012).
0003 Vacuum transistors are useful for the next genera tion high speed and low-power electronics. For instance,
vacuum transistors offer high speed performance with the
potential to reach terahertz (THz) operation with Zero body to-gate-capacitance and ballistic transport of electrons. They
operate at low power with the potential to achieve sub
threshold swing less than 60 millivolts per decade (mV/dec)
with scaled dielectrics.
0004. However, conventional vacuum transistors have
several notable drawbacks. High voltage is needed to induce
field emission. For instance, 1-10 volts are needed for
current silicon-based devices. These devices also have a low
field emission current density. See, for example, Srisonphan
et al., “Metal-oxide-semiconductor field-effect transistor
with a vacuum channel.” Nature Nanotechnology 7, 504-508
(July 2012).
0005. Therefore, improved vacuum transistor designs
which do not suffer from the above-described drawbacks
would be desirable.
https://patentimages.storage.googleapis.com/74/a9/38/85f1922d6fd4a8/US20170062743A1.pdf