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Vacuum channel transistor


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48 minutes ago, vladd said:

Nema tu cene, nema ni crva :) , to su u duzem periodu strateske komponente...

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The velocity of electrons in vacuum is theoretically 3x10'10 cm/s, but is limited to about 5x107 cm/s in semiconductors. As the cathodes of vacuum tubes need to be heated for thermionic emission of electrons, the energy for heating adversely overwhelms the energy required for field emission. The vacuum device is, therefore, not suitable for low power devices. For high power amplification ( >50 W)

Also, an ultimate downscaling in conjunction with low work function materials may decrease the turn-on gate and drain voltages to less than 1V, thus enabling these devices to be competitive with modern semiconductor technology. These benefits can be attained by the use of matured IC technology to fabricate nanoscale vacuum tubes and facilitate circuit integration

The electron velocity in vacuum can approach the speed of light (3 × 10'10 cm/s), while the saturation velocity in solid state devices is typically limited to 107 cm/s by collisions with optical and acoustic phonons. Screen Shot 2018-10-23 at 4.23.32 PM.png
The highest speed at which solid-state devices of Si and GaAs can be operated at is about 20 GHz and 100 GHz, respectively. However, if FEAs are incorporated into linear beam devices, such as klystrons, traveling wave tubes (TWT), and backward wave oscillator (BWO) tubes instead of the simple triode structure, the operating frequency of vacuum microelectronic devices can be increased to 100–500 GHz. 

Nevertheless, the VFETs find only limited use in specialized applications, such as field emission displays, high-fidelity amplifiers and high power RF systems in contrast to the widespread use of MOSFET in modern electronics.

 

Evo čovek spominje hifu...samo ne i godinu kada će biti. 

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